A technology of RAM (Random Access Memory) new currently being developed by the researchers. With that combination, the energy consumption of RAM to be more power efficient but has a much better speed.
FeTRAM, ferroelectric random acces memory transistor, is the result of a combination between the nanowire with the polymer. According to the author at the Birck Nanotechnology Center (BNC) at Purdue University, thanks to this combination, FetRAM has its own performance compared with traditional RAM.
Ferroelectric materials have the ability to change the polarity according to the terrain that are nearby. This property is then used by researchers at the BNC to form it into Ferroelectric transistors that are currently still on the market.
